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- W2069433395 abstract "The reproducible fabrication of narrow (∼1.1 μm wide) mesas for buried heterostructure lasers requires development of high quality stepper lithography and anisotropic dry etching of both the etch/regrowth mask and the underlying semiconductor. Using a contrast enhancement method we demonstrate production of 1.1 μm photoresist lines with excellent uniformity (≤7% variation in width) over 2 in. φ wafers. High fidelity pattern transfer to the underlying is achieved using a low pressure (1 mTorr) electron cyclotron resonance (ECR) discharge with low additional dc bias (−75 V) on the sample. Subsequent formation of the 3.5 μm high semiconductor mesa is readily achieved using an ECR low pressure discharge (≤2 mTorr) with the sample held at ∼150°C. The semiconductor etch rate is more than an order of magnitude faster under these conditions than in conventional discharges, and there is an absence of mask narrowing." @default.
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- W2069433395 date "1993-11-01" @default.
- W2069433395 modified "2023-10-18" @default.
- W2069433395 title "Formation of Narrow, Dry‐Etched Mesas for Long Wavelength InP ‐ InGaAsP Lasers" @default.
- W2069433395 doi "https://doi.org/10.1149/1.2221024" @default.
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