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• W2069455798 abstract "This report involves the study of Se adsorption on caesiated Si(100) 2×1 surfaces in ultra high vacuum (UHV) using low energy electron diffraction, Auger electron spectroscopy, thermal desorption spectroscopy and work function measurements. Selenium atoms on Cs/Si(100) 2×1 surface adsorb initially on uncaesiated portions of Si and subsequently on the Cs overlayer. The presence of Se increases the binding energy of Cs on Si(100). For Cs and Se coverages above 0.5 ml CsSe and CsxSeySiz, compound formation was observed. The coadsorption of Se and Cs induces a high degree of surface disorder, while desorption most probably causes surface etching. The presence of Cs on Si(100) 2×1 surfaces prevents the diffusion of Se into the Si substrate and greatly suppresses the formation of SiSe2 and SiSe3, detected when Se is adsorbed on clean Si(100) 2×1 surfaces." @default.
• W2069455798 created "2016-06-24" @default.
• W2069455798 creator A5031440188 @default.
• W2069455798 creator A5060995243 @default.
• W2069455798 date "2004-03-01" @default.
• W2069455798 modified "2023-09-27" @default.
• W2069455798 title "Selenium adsorption on Cs-covered Si(100) 2×1 surfaces" @default.
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• W2069455798 doi "https://doi.org/10.1016/j.ssc.2003.12.009" @default.
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