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- W2069644751 abstract "The influence of ion implantation on diamond and cubic boron nitride is discussed. It is shown that high energy ion implantation (0.5 MeV nucleon−1 and higher) is a promising ion beam method of modification causing new effects in the superstrong semiconductors: (1) formation of multilayer impurity-defect structures which allows one to make three-dimensional doped structures; (2) stimulation of impurity and defect diffusion along the tracks of the high energy ions (using this effect the doping of the super-strong semiconductors with low temperature (about 1000 °C) diffusion at depths of several microns is possible); (3) formation of high pressure (several gigapascals) local regions." @default.
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- W2069644751 title "High energy ion implantation into diamond and cubic boron nitride" @default.
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