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- W2069647199 abstract "Transparent semiconductor thin films of Zn1−x Mg x O (0 ≤ x ≤ 0.36) were prepared using a sol–gel process; the crystallinity levels, microstructures, and optical properties affected by Mg content were studied. The experimental results showed that addition of Mg species in ZnO films markedly decreased the surface roughness and improved transparency in the visible range. A Zn1−x Mg x O film with an x-value of 0.2 exhibited the best average transmittance, namely 93.7%, and a root-mean-square (RMS) roughness of 1.63 nm. Therefore, thin-film transistors (TFTs) with a Zn0.8Mg0.2O active channel layer were fabricated and found to have n-type enhancement mode. The Zn0.8Mg0.2O TFT had a field-effect mobility of 0.1 cm2/V s, threshold voltage of 6.0 V, and drain current on/off ratio of more than 107." @default.
- W2069647199 created "2016-06-24" @default.
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- W2069647199 date "2009-05-22" @default.
- W2069647199 modified "2023-10-06" @default.
- W2069647199 title "Characterization of Zn1−x Mg x O Films Prepared by the Sol–Gel Process and Their Application for Thin-Film Transistors" @default.
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- W2069647199 doi "https://doi.org/10.1007/s11664-009-0835-y" @default.
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