FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2069651625> ?p ?o ?g. }

• W2069651625 abstract "Abstract A BCl3/Ne plasma chemistry was used to etch Ga-based (GaAs, AlGaAs, GaSb) and In-based (InGaP, InP, InAs and InGaAsP) compound semiconductors in a planar inductively coupled plasma (ICP) reactor. The addition of the Ne allows the plasma to maintain high ion density conditions over a broader range of operating pressures. All of the materials exhibit a maximum etch rate at BCl3-to-Ne ratios of 0.25–0.5. Under all conditions, the Ga-based materials etched at significantly higher rates than the In-based materials, due to the higher volatilities of their trichloride etch products relative to InCl3. The etched surfaces of both AlGaAs and GaAs have comparable root-mean-square (rms) roughness and similar stoichiometry to the unetched control samples, while the surfaces of In-based materials are degraded by the BCl3/Ne etching. Etch anisotropy of the GaAs and AlGaAs relies on some degree of sidewall passivation by redeposition of etch products and photoresist from the mask." @default.
• W2069651625 created "2016-06-24" @default.
• W2069651625 creator A5013775431 @default.
• W2069651625 creator A5026162456 @default.
• W2069651625 creator A5037761635 @default.
• W2069651625 creator A5054887949 @default.
• W2069651625 creator A5069421239 @default.
• W2069651625 creator A5085141364 @default.
• W2069651625 creator A5085381025 @default.
• W2069651625 date "2004-01-01" @default.
• W2069651625 modified "2023-09-23" @default.
• W2069651625 title "BCl3/Ne etching of III–V semiconductors in a planar inductively coupled plasma reactor" @default.
• W2069651625 cites W1628245918 @default.
• W2069651625 cites W1965086399 @default.
• W2069651625 cites W1969258694 @default.
• W2069651625 cites W1976571449 @default.
• W2069651625 cites W1992973307 @default.
• W2069651625 cites W1999922101 @default.
• W2069651625 cites W2001662421 @default.
• W2069651625 cites W2006839183 @default.
• W2069651625 cites W2007851538 @default.
• W2069651625 cites W2010759993 @default.
• W2069651625 cites W2011536547 @default.
• W2069651625 cites W2014341290 @default.
• W2069651625 cites W2023324940 @default.
• W2069651625 cites W2024373100 @default.
• W2069651625 cites W2024494520 @default.
• W2069651625 cites W2026664087 @default.
• W2069651625 cites W2039463592 @default.
• W2069651625 cites W2042994765 @default.
• W2069651625 cites W2047011992 @default.
• W2069651625 cites W2049903178 @default.
• W2069651625 cites W2054131107 @default.
• W2069651625 cites W2067245364 @default.
• W2069651625 cites W2074652101 @default.
• W2069651625 cites W2091906752 @default.
• W2069651625 cites W2092968452 @default.
• W2069651625 doi "https://doi.org/10.1016/j.apsusc.2003.08.009" @default.
• W2069651625 hasPublicationYear "2004" @default.
• W2069651625 type Work @default.
• W2069651625 sameAs 2069651625 @default.
• W2069651625 citedByCount "4" @default.
• W2069651625 crossrefType "journal-article" @default.
• W2069651625 hasAuthorship W2069651625A5013775431 @default.
• W2069651625 hasAuthorship W2069651625A5026162456 @default.
• W2069651625 hasAuthorship W2069651625A5037761635 @default.
• W2069651625 hasAuthorship W2069651625A5054887949 @default.
• W2069651625 hasAuthorship W2069651625A5069421239 @default.
• W2069651625 hasAuthorship W2069651625A5085141364 @default.
• W2069651625 hasAuthorship W2069651625A5085381025 @default.
• W2069651625 hasConcept C100460472 @default.
• W2069651625 hasConcept C107187091 @default.
• W2069651625 hasConcept C108225325 @default.
• W2069651625 hasConcept C113196181 @default.
• W2069651625 hasConcept C121332964 @default.
• W2069651625 hasConcept C1291036 @default.
• W2069651625 hasConcept C134406635 @default.
• W2069651625 hasConcept C171250308 @default.
• W2069651625 hasConcept C185592680 @default.
• W2069651625 hasConcept C192562407 @default.
• W2069651625 hasConcept C2779227376 @default.
• W2069651625 hasConcept C33574316 @default.
• W2069651625 hasConcept C43617362 @default.
• W2069651625 hasConcept C49040817 @default.
• W2069651625 hasConcept C62520636 @default.
• W2069651625 hasConcept C81626474 @default.
• W2069651625 hasConcept C82706917 @default.
• W2069651625 hasConcept C95974651 @default.
• W2069651625 hasConceptScore W2069651625C100460472 @default.
• W2069651625 hasConceptScore W2069651625C107187091 @default.
• W2069651625 hasConceptScore W2069651625C108225325 @default.
• W2069651625 hasConceptScore W2069651625C113196181 @default.
• W2069651625 hasConceptScore W2069651625C121332964 @default.
• W2069651625 hasConceptScore W2069651625C1291036 @default.
• W2069651625 hasConceptScore W2069651625C134406635 @default.
• W2069651625 hasConceptScore W2069651625C171250308 @default.
• W2069651625 hasConceptScore W2069651625C185592680 @default.
• W2069651625 hasConceptScore W2069651625C192562407 @default.
• W2069651625 hasConceptScore W2069651625C2779227376 @default.
• W2069651625 hasConceptScore W2069651625C33574316 @default.
• W2069651625 hasConceptScore W2069651625C43617362 @default.
• W2069651625 hasConceptScore W2069651625C49040817 @default.
• W2069651625 hasConceptScore W2069651625C62520636 @default.
• W2069651625 hasConceptScore W2069651625C81626474 @default.
• W2069651625 hasConceptScore W2069651625C82706917 @default.
• W2069651625 hasConceptScore W2069651625C95974651 @default.
• W2069651625 hasLocation W20696516251 @default.
• W2069651625 hasOpenAccess W2069651625 @default.
• W2069651625 hasPrimaryLocation W20696516251 @default.
• W2069651625 hasRelatedWork W1544774047 @default.
• W2069651625 hasRelatedWork W1986965160 @default.
• W2069651625 hasRelatedWork W2013767180 @default.
• W2069651625 hasRelatedWork W2014713921 @default.
• W2069651625 hasRelatedWork W2028277395 @default.
• W2069651625 hasRelatedWork W2047427713 @default.
• W2069651625 hasRelatedWork W2065108417 @default.
• W2069651625 hasRelatedWork W2127848248 @default.
• W2069651625 hasRelatedWork W2312277644 @default.
• W2069651625 hasRelatedWork W3151647830 @default.
• W2069651625 isParatext "false" @default.

• next