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- W2069661678 abstract "Abstract Indium-tin-oxide (ITO) is a transparent semiconductor that can be formed so that it exhibits a very low resistivity. The applications of this material include solar cells, photodetectors, and transparent contacts for devices such as flat panel displays, and touch sensitive cathode ray tube screens. The authors have investigated the role of both vacuum and reducing atmosphere (N 2 + H 2 ) annealing on the properties of thick film ITO. Both vacuum annealing and forming gas (N 2 + H 2 ) annealing result in films with significantly lower resistivity than unannealed films. Samples with sheet resistances of 150 Ω/square have been produced. These values are the lowest reported to date for ITO thick films. Optical characterization including transmission and reflectivity have been conducted, as well as examination of the conductivity as a function of temperature." @default.
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- W2069661678 date "1994-05-01" @default.
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- W2069661678 title "Comprehensive evaluation of ITO thick films produced under optimum annealing conditions" @default.
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- W2069661678 doi "https://doi.org/10.1016/0927-0248(94)90290-9" @default.
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