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• W2069763922 abstract "Structural defects induced by electron irradiation of n-Cz-Si wafers were identified. The influence of the annealing conditions in a chlorine-containing atmosphere on the structural and luminescent properties of the samples was examined and the optimal annealing conditions were found. Light-emitting diodes based on electron-irradiated and high-temperature-annealed wafers were fabricated by a vapour-phase epitaxy technique and their luminescence properties were studied. A high-intensity dislocation-related D1 line was observed at 1.6 μm in the room-temperature electroluminescence spectrum." @default.
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• W2069763922 date "2013-10-01" @default.
• W2069763922 modified "2023-10-12" @default.
• W2069763922 title "Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon" @default.
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• W2069763922 doi "https://doi.org/10.4028/www.scientific.net/ssp.205-206.305" @default.
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