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- W2069764562 abstract "Abstract The thickness of GaAs layers grown by liquid phase epitaxy (LPE) in horizontal boats on GaAs (100) substrates has been measured as a function of starting growth temperature (730–900°C) while keeping the cooling rate (1°C/min) and the cooling interval (30°C) constant. The results show the thickness to vary linearly with the reciprocal of the slope of the Ga-As liquids curve. This relationship is consistent with the published theories of diffusion-limited LPE growth, and indicates that the mutual diffusivity in Ga-As solutions does not vary greatly over the temperature range investigated." @default.
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- W2069764562 date "1976-01-01" @default.
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- W2069764562 title "Dependence of GaAs LPE layer thickness on growth temperature" @default.
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- W2069764562 doi "https://doi.org/10.1016/0022-0248(76)90010-5" @default.
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