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- W2069812877 abstract "Pulsed laser deposition with KrF-excimer laser radiation ((lambda) equals 248 nm, (tau) equals 25 ns) is used to grow thin films of diamond-like carbon (DLC) on Si substrates by material removal from a graphite target in vacuum (10<SUP>-5</SUP> - 10<SUP>-4</SUP> mbar) or in processing gas atmospheres (He, Ne, Ar, Kr, p approximately equals 10<SUP>-2</SUP> mbar). Additional ion bombardment is performed by extracting inert gas ions from a low pressure rf gas discharge which is ignited in the deposition chamber. Raman spectroscopy reveals that the sp<SUP>3</SUP>-content of the DLC films depends on the fluence of the laser radiation on the target, the substrate temperature and processing gas pressure. Especially the applied laser fluence and the inert gas pressure strongly influence the energy of the film-forming particles and therefore the relative amounts of sp<SUP>2</SUP> and sp<SUP>3</SUP> bonds in the films. Using additional ion bombardment from the low pressure gas discharge leads to more nanoclustered films in the case of higher ion masses due to a more effective defect creation. However, the films are predominantly sp<SUP>2</SUP>-bonded, caused by substrate heating due to dissipation of electric energy at the substrate electrode." @default.
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- W2069812877 date "1998-05-26" @default.
- W2069812877 modified "2023-09-27" @default.
- W2069812877 title "<title>DLC thin film growth under energetic particle bombardment: a comparison between PLD and rf-bias enhanced PLD</title>" @default.
- W2069812877 doi "https://doi.org/10.1117/12.308599" @default.
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