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- W2069820328 abstract "Details of the structural and electrical properties of epitaxial DyP/GaAs and DyAs/GaAs is reported. DyP is lattice matched to GaAs, with a room temperature mismatch of less than 0.01%. DyAs, on the other hand, has a mismatch of nearly 2.4%. Both DyP and DyAs have been grown by solid source MBE using custom designed group V thermal cracker cells and group III high-temperature effusion cells. High-quality DyP and DyAs epilayers, as determined by XRD, TEM, and AFM analysis, were obtained for growth temperatures ranging from 500°C to 600°C with growth rates between 0.5 and 0.7 μm/h. The DyP epilayers are n-type with measured electron concentrations of the order of 3×1020 to 4×1020 cm−3, with room temperature mobilities of 250–300 cm2/V s, and with a barrier height of 0.75 eV to GaAs. The DyAs epilayers are also n-type with concentration of 1×1021 to 2×1021 cm−3, with mobilities between 25 and 40 cm2/V s. DyP is stable in air with no apparent oxidation taking place, even after months of ambient exposure to untreated air." @default.
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- W2069820328 date "1998-07-01" @default.
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- W2069820328 title "Growth and characterization of DyP/GaAs and DyAs/GaAs-based heterostructures and superlattices" @default.
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- W2069820328 doi "https://doi.org/10.1016/s1386-9477(98)00075-7" @default.
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