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- W2069861287 abstract "A new technology-based static FOM is introduced to demonstrate the superiority of SOI technology LDMOSFETs over the bulk technologies. The studied FOM also takes into account the thermal effect using the maximum junction temperature (125deg C) for the active silicon layer." @default.
- W2069861287 created "2016-06-24" @default.
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- W2069861287 date "2007-10-01" @default.
- W2069861287 modified "2023-10-14" @default.
- W2069861287 title "Technology-Based Figure of Merit (FOM) for High Voltage LDMOSFETs - Proof of Value of SOI in Power ICs" @default.
- W2069861287 cites W2103947167 @default.
- W2069861287 doi "https://doi.org/10.1109/soi.2007.4357850" @default.
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