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• W2069873043 abstract "In this paper, for the first time, the reliability of HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> -based RRAM devices integrated in an advanced 28nm CMOS 16kbit demonstrator is presented. The effect of the introduction of a thin Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> layer in TiN/Ti/HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> /TiN is explored to improve the memory performances. Thanks to the in-depth electrical characterization of both HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> stacks at device level and in the 16×1kbit demonstrator the interest of the bilayer is put forward (endurance: 1 decade after 1M cycles and retention: 6 hours at 200°C). Finally, thanks to our 3D model based on calculation of the Conductive Filament resistance using trap assisted tunneling (TAT) the role of Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> as tunneling layer is highlighted." @default.
• W2069873043 created "2016-06-24" @default.
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• W2069873043 date "2015-09-01" @default.
• W2069873043 modified "2023-10-01" @default.
• W2069873043 title "Benefit of Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> bilayer for BEOL RRAM integration through 16kb memory cut characterization" @default.
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• W2069873043 doi "https://doi.org/10.1109/essderc.2015.7324765" @default.
• W2069873043 hasPublicationYear "2015" @default.
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