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• W2070003148 abstract "Undoped and Te-doped gallium antimonide (GaSb) layers have been grown on GaSb bulk substrates by the liquid phase epitaxial technique from Ga-rich and Sb-rich melts. The nucleation morphology of the grown layers has been studied as a function of growth temperature and substrate orientation. MOS structures have been fabricated on the epilayers to evaluate the native defect content in the grown layers from theC-V characteristics. Layers grown from antimony rich melts always exhibitp-type conductivity. In contrast, a type conversion fromp- ton- was observed in layers grown from gallium rich melts below 400 C. The electron mobility of undopedn-type layers grown from Ga-rich melts and tellurium doped layers grown from Sb- and Ga-rich solutions has been evaluated." @default.
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• W2070003148 date "1995-11-01" @default.
• W2070003148 modified "2023-09-25" @default.
• W2070003148 title "Liquid phase epitaxial growth of pure and doped GaSb layers: morphological evolution and native defects" @default.
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• W2070003148 doi "https://doi.org/10.1007/bf02745278" @default.
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