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- W2070036002 abstract "We have recently demonstrated indium antimonide based quantum well field effect transistors with 85 nm physical gate length. Enhancement mode n-channel InSb quantum well transistors (QWFETs) exhibit unity gain cutoff frequency, exceeding 300 GHz at an operating voltage of only 0.5 V VDS. The InSb quantum well transistors demonstrate 50% higher intrinsic speed, than silicon NMOS transistors while consuming 10 times less active DC power" @default.
- W2070036002 created "2016-06-24" @default.
- W2070036002 creator A5036105393 @default.
- W2070036002 date "2006-05-25" @default.
- W2070036002 modified "2023-09-25" @default.
- W2070036002 title "Antimonide based Quantum Well Transistors for High Speed, Low Power Logic Applications" @default.
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- W2070036002 doi "https://doi.org/10.1109/iciprm.2006.1634141" @default.
- W2070036002 hasPublicationYear "2006" @default.
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