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- W2070067874 abstract "Abstract Diamond, due to its unique combination of excellent thermal, electrical and mechanical properties, is a candidate material for MCM thermal management. However, because of inherent limitations in its growth, some degree of post-deposition surface finishing is usually required. This paper describes the results of reactive ion etching (RIE) of polycrystalline diamond films in an oxygen plasma. The etching procedure was characterized in terms of etch rate and impact on the surface morphology of the diamond and its potential as a pretreatment for the chemically-assisted mechanical polishing (CAMP) of diamond films. Diamond films deposited by both DC arcjet chemical vapor deposition (CVD) and microwave plasma CVD (MPCVD) were used in this work. The etch rate is shown to increase with increasing RF power, chamber pressure and a restricted range of oxygen flow rate. At low pressures, etching occurs primarily in the grain boundary regions, whereas, at high pressures, microchannels are formed near the tips of individual crystallites. Etching at low powers produces uniform surface pitting and columnar structures over the entire surface. Etching also causes all films to darken in color. The degree of darkening increases with increasing etch rate and etch time. Etch rates are in the range of 50–100 nm/min for the DC arcjet films and 50–60 nm/min for the MPCVD films. Etching reduced the average surface roughness by approximately 50%." @default.
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- W2070067874 date "1997-05-01" @default.
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- W2070067874 title "Reactive ion etching of diamond as a means of enhancing chemically-assisted mechanical polishing efficiency" @default.
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- W2070067874 doi "https://doi.org/10.1016/s0925-9635(96)00767-4" @default.
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