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• W2070102012 abstract "Homoepitaxial GaAs layers were grown by low-pressure metalorganic vapor phase epitaxy (MOVPE), by using the metalorganic precursors trimethylgallium (TMGa) and the low-toxicity, low-dissociation-temperature tertiary-butyl-arsine (TBAs), in order to exploit the phenomenon of controlled intrinsic carbon doping. Low-temperature photoluminescence, Hall effect and capacitance-voltage measurements were performed on the grown samples. The intrinsic carbon doping was studied as a function of: (i) the growth temperature (ranging between 500°C and 640°C), (ii) the V/III precursor ratio in the vapour phase (ranging between 1 and 25) and (iii) the influence of GaAs substrate mis-orientation (0° and 2°off toward 110). Although a reduced carbon incorporation rate was expected by using TBAs, which is a benefit in obtaining high purity GaAs, intrinsically p-doped GaAs layers with a hole concentrations up to 6.5×1018 cm−3 and a corresponding RT mobility in the range (100–400) cm2/V s were obtained." @default.
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• W2070102012 date "2003-02-01" @default.
• W2070102012 modified "2023-09-24" @default.
• W2070102012 title "Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs" @default.
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• W2070102012 doi "https://doi.org/10.1016/s0022-0248(02)01846-8" @default.
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