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- W2070107047 abstract "The influence of cathode coverplate material on inductively coupled plasma etching of GaN and AlGaN with 1% and 10% of Al was investigated. It was revealed that coverplate material has a great impact on the etching of Al-containing layers. Results obtained with a graphite coverplate and a Si wafer on top of a quartz coverplate indicate that etch products of coverplate material such as SiClx, CClx reactive species and SiClx+, CClx+ ions play a significant role in fast and smooth etching of Al-containing layers. They act as getters to remove oxygen in the process chamber and as effective etchers for oxide layers formed by background oxygen in the process chamber. Experiments where SiCl4 gas was added to Cl2∕Ar plasma confirmed the role of SiClx reactive species and SiClx+ ions for fast and smooth etching of AlGaN layers." @default.
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- W2070107047 date "2004-10-20" @default.
- W2070107047 modified "2023-10-18" @default.
- W2070107047 title "Influence of cathode material and SiCl4 gas on inductively coupled plasma etching of AlGaN layers with Cl2∕Ar plasma" @default.
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- W2070107047 doi "https://doi.org/10.1116/1.1798711" @default.
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