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- W2070160993 abstract "The effect of the defect density in hydrogenated amorphous and microcrystalline silicon (a-Si:H and µc-Si:H) absorber layers on the performance of thin film solar cells was investigated. The defect density was varied reproducibly over more than two orders of magnitude by 2 MeV electron bombardment and subsequent thermal annealing. Considerable quantitative and qualitative differences were observed for the dependences of the cells parameters on the defect densities of a-Si:H and µc-Si:H. The experimental data suggest further possible improvement of µc-Si:H based solar cells with further reduced defect densities, while for a-Si:H based solar cells, a saturation of performance is observed below a defect density of about 10 16 cm -3 . Moreover, the experimental data provide an excellent database for numerical simulation over a range unavailable so far particularly in µc-Si:H based solar cells." @default.
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- W2070160993 date "2012-01-25" @default.
- W2070160993 modified "2023-09-23" @default.
- W2070160993 title "Variation in Absorber Layer Defect Density in Amorphous and Microcrystalline Silicon Thin Film Solar Cells with 2 MeV Electron Bombardment" @default.
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- W2070160993 doi "https://doi.org/10.1143/jjap.51.022301" @default.
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