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• W2070291695 abstract "Abstract This paper reports on doping experiments with LPE growth in the system InGaAsP lattice matched to InP in (100) orientation. We find Sn to be the best suited donor for the whole composition range, the acceptor Mn for InGaAs and the acceptor Cd for the other compositions. We compare our results with doping experiments described in the literature. Whereas the bulk of our experiments was done with an In-rich melt, we also studied the growth of InP from the Sn-rich melt and found it to be diffusion limited. We present mobility data for electrons and holes in the doping range covered by our experiments." @default.
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• W2070291695 date "1986-01-01" @default.
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• W2070291695 title "Growth and doping of InGaAsP/InP by liquid-phase epitaxy" @default.
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• W2070291695 doi "https://doi.org/10.1016/0022-0248(86)90245-9" @default.
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