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- W2070420906 abstract "The precipitation behaviour of copper in silicon is examined from a macroscopic point of view by means of I.R. microscopy, X-ray micrography, and etching. It is shown that the arms of the starts and the “needles” commonly observed in silicon which is heavily decorated with copper, have the form of “swords” parallel to the (111) and pointing in the 〈110〉 directions. These sword-like regions are built up of a large number of small copper containing specks and dislocations. A mechanism is proposed which explains the nucleation and growth of the decoration-patterns. This is based on indentation by oxygen containing precipitates and climb of the resulting fresh dislocation. The X-ray experiments show that, although decorated dislocations produce a broadened image and complete extinction cannot be obtained, the determination of the Burgers vector is still possible. Das Abscheidungsverhalten von Kupfer in Silizium wurde durch IR-Mikroskopie, Röntgenmikrographie und Ätzen untersucht. Es wird gezeigt, daß die Arme der Sterne und die „Nadeln”︁, die gewöhnlich in stark mit Kupfer dekoriertem Silizium beobachtet werden, die Form von „Schwertern”︁ parallel zu (111) haben und in die 〈110〉-Richtungen zeigen. Diese schwertförmigen Bereiche sind aus einer großen Zahl von Kupfer enthaltenden Flecken und Versetzungen aufgebaut. Es wird ein Mechanismus vorgeschlagen, der die Keimbildung und das Wachstum der Dekorationsmuster erklärt. Er beruht auf der Auszackung der Sauerstoff enthaltenden Abscheidungen und Klettern der sich ergebenden Versetzungen. Aus den Röntgenstrahluntersuchungen ergab sich, daß der Burgersvektor noch bestimmbar war, obwohl die dekorierten Versetzungen ein verbreitertes Bild erzeugen und vollständige Extinktion nicht erhalten werden konnte." @default.
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- W2070420906 date "1965-01-01" @default.
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- W2070420906 title "The Precipitation Behaviour of Copper in Silicon Single Crystals" @default.
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- W2070420906 doi "https://doi.org/10.1002/pssb.19650120125" @default.
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