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- W2070467080 abstract "Transmission electron microscopy (TEM) was employed to characterize the misfit dislocation systems in epitaxial bilayer films of TiN, NbN, VN, and TiNbN as a function of overlayer film thickness and degree of lattice mismatch. Thin epitaxial nitride overlayers on 100 nm thick nitride buffer layers were deposited by dual-cathode ultra-high vacuum magnetron sputtering onto MgO(001) substrates. Plan-view weak-beam TEM showed that the primary misfit dislocations were of edge type with line direction [110] and Burgers vectors 12[110] within the plane of the interface. The critical thickness for the onset of strain relaxation increased with decreasing mismatch ε from <2 nm for NbN/TiN (ε = 3.6%) to 2–3 nm for (rmVN/TiN) and TiN/Ti0.3Nb0.7N (ε = 2.4%) and to 3–5 nm for NbN/Ti0.3Nb0.7N (ε = 1%). Domain formation was observed in all systems above a critical thickness." @default.
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- W2070467080 date "1994-01-01" @default.
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- W2070467080 title "Characterization of misfit dislocations in epitaxial (001)-oriented TiN, NbN, VN, and (Ti,Nb) N film heterostructures by transmission electron microscopy" @default.
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- W2070467080 doi "https://doi.org/10.1016/0022-0248(94)90757-9" @default.
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