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- W2070529400 abstract "We have investigated the H-terminated Si(100) surfaces using infrared and surface Raman spectroscopy. We discussed the silicon-hydride structures on chemically etched Si(100) surfaces which were produced by HF:H2O2, HF, and NH4F solutions. We focused especially on the dihydride structure which was the dominant species on a 1 × 1 phase. We found two distinguishable patterns in the depolarized Raman distribution corresponding to two dihydride structures. That is, the dihydride on NH4F- and HF-treated surfaces shows almost the same depolarized distribution, but that of the HF:H2O2-treated surface is significantly shifted from others. By analyzing the depolarized Raman distributions using a thin-film model, we have discussed the possible dihydride structures. The two types of depolarized distribution suggest the existence of symmetric dihydride and canted dihydride on chemically etched Si(100) surfaces." @default.
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- W2070529400 date "1997-06-01" @default.
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- W2070529400 title "Infrared and Raman study of H-terminated Si(100) surfaces produced by etching solutions" @default.
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- W2070529400 doi "https://doi.org/10.1016/s0169-4332(97)80046-3" @default.
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