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- W2070597988 abstract "Two types of silicon gated field-emission cathodes have been fabricated. The first is fabricated using a phosphosilicate glass insulation layer and a non-self-aligned etched polysilicon gate. The second type is formed by evaporating silicon dioxide and chrome onto a field-emission point capped by its etch mask. The self-aligned gate is then patterned by lifting-off the cap. Cathode current of the etched-gate structure was not measured until 150 V, at which value the device also failed. Current was measured, however, between the gate and the anode of this structure. This gate-anode current is attributed to a nonplanar gate structure and a gate-anode spacing of ∼0.5 μm. Gate-anode currents follow a Fowler–Nordheim characteristic, emitting 0.16 μA/gate at 4 V. Current from the lift-off structure was measured between the cathode and the gate. Currents averaging to 0.2 μA/tip at 23 V on the gate have been measured. These devices are intended for application to vacuum microelectronics, flat-panel displays, and cold-cathode electron-beam instruments." @default.
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- W2070597988 date "1993-03-01" @default.
- W2070597988 modified "2023-09-27" @default.
- W2070597988 title "Fabrication of gated silicon field-emission cathodes for vacuum microelectronics and electron-beam applications" @default.
- W2070597988 doi "https://doi.org/10.1116/1.586883" @default.
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