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• W2070604470 abstract "Subsurface boron doping reconstructs the Si(111) surface and alters the electronic character of the surface Si atoms. The interaction of atomic hydrogen with the boron-modified Si(111)-(√3×√3)-R30° surface was studied using temperature programmed desorption (TPD), high-resolution electron energy-loss spectroscopy (HREELS), and low-energy electron diffraction. In comparison to the Si(111)-(7×7) surface, we observe a significantly reduced hydrogen saturation coverage, measured by TPD and HREELS, and the absence of silane production. The ordered (1/3 ML) subsurface boron atoms passivate the surface Si atoms and reduce their reactivity with atomic hydrogen. This leads to a surface condition causing suppression of silicon etching by atomic hydrogen, compared to the unmodified Si(111)-(7×7) surface." @default.
• W2070604470 created "2016-06-24" @default.
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• W2070604470 date "1991-09-15" @default.
• W2070604470 modified "2023-09-23" @default.
• W2070604470 title "Inhibition of atomic hydrogen etching of Si(111) by boron doping" @default.
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• W2070604470 doi "https://doi.org/10.1063/1.349320" @default.
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