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• W2070954295 abstract "We analyzed the temperature-dependent electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) using a gated-four-probe method (GFP) with temperatures ranging from 93 to 373 K. The intrinsic field-effect mobility and source/drain parasitic resistance were separately extracted using the GFP method. We found that temperature-dependent transfer characteristics originated from the temperature-dependent intrinsic field-effect mobility of the a-IGZO TFTs. The parasitic resistance was also correlated with the intrinsic-field effect mobility, which decreases as the intrinsic field-effect mobility increases, indicating that access parasitic resistance originated from bulk regions rather than metal/semiconductor junction barrier is a key factor to determine the parasitic resistance of a-IGZO TFTs." @default.
• W2070954295 created "2016-06-24" @default.
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• W2070954295 date "2013-09-03" @default.
• W2070954295 modified "2023-09-23" @default.
• W2070954295 title "Analysis of temperature-dependent electrical characteristics in amorphous In-Ga-Zn-O thin-film transistors using gated-four-probe measurements" @default.
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• W2070954295 doi "https://doi.org/10.1063/1.4819886" @default.
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