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• W2071036214 startingPage "064503" @default.
• W2071036214 abstract "Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage. In order to employ the TFET for circuit applications, these problems need to be tackled. In this paper, a novel lateral strained double-gate TFET (SDGTFET) is presented. Using device simulation, we show that the SDGTFET has a higher on-current, low leakage, low threshold voltage, excellent subthreshold slope, and good short channel effects and also meets important ITRS guidelines." @default.
• W2071036214 created "2016-06-24" @default.
• W2071036214 creator A5026324323 @default.
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• W2071036214 date "2009-06-22" @default.
• W2071036214 modified "2023-10-10" @default.
• W2071036214 title "Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis" @default.
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• W2071036214 doi "https://doi.org/10.1143/jjap.48.064503" @default.
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