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- W2071036391 abstract "We have studied some characteristic behaviors of homoepitaxial growth on III–V semiconductor surfaces by taking account of two components explicitly in a Monte Carlo simulation. In addition to the surface step density, the coverage of cation or anion in the topmost layer shows oscillatory behavior during the growth, which varies as a function of the beam fluxes as well as the temperature. We have also studied on the effects of barrier energies to hopping for cation and anion, of the anisotropy of the barrier energies and of the beam flux ratio between cation and anion. By taking the growth on GaAs(100) as an example, we compare the simulated results with the reported experimental ones. The growth mode transition temperature observed in experiment is reproduced by using anisotropic hopping barrier energy. The island shape changes during the recovery process to anisotropic rectangular form with the longer dimension along the As dimer direction, which is in good agreement with the reported experimental observation." @default.
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- W2071036391 date "1999-08-01" @default.
- W2071036391 modified "2023-09-27" @default.
- W2071036391 title "Monte Carlo simulation of homoepitaxial growth on two-component compound semiconductor surfaces" @default.
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- W2071036391 doi "https://doi.org/10.1016/s0039-6028(99)00608-1" @default.
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