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• W2071063768 endingPage "031102" @default.
• W2071063768 startingPage "031102" @default.
• W2071063768 abstract "We investigated the resistance switching (RS) phenomenon in epitaxial NiO (epi-NiO) films by employing different types of top electrodes (TEs). Epi-NiO showed successive bipolar RS when Pt and CaRuO 3 (CRO) were used as the TEs, but not when Al and Ti were used. We studied the temperature dependence of the current–voltage ( I – V ) characteristics for various TEs and resistance states to understand the conduction properties of TE/epi-NiO. Pristine CRO/epi-NiO showed metallic behavior, while pristine Pt/epi-NiO and Al/epi-NiO showed insulating behavior. Pt/epi-NiO and Al/epi-NiO, however, switched to a metallic or non-insulating state after electroforming. Transmission electron microscopy (TEM) images revealed the presence of a distinct stable interfacial AlO x layer in pristine Al/epi-NiO. On the other hand, the interfacial metal oxide layer was indistinguishable in the case of pristine Pt/epi-NiO and CRO/epi-NiO. Our experimental results suggested that epi-NiO has an oxygen defect on its surface and therefore the various TE/epi-NiO interfaces characterized in this study adopt distinctive electrical states. Further, the bipolar RS phenomenon can be explained by the voltage-polarity-dependent movement of oxygen ions near the interface." @default.
• W2071063768 created "2016-06-24" @default.
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• W2071063768 date "2010-03-01" @default.
• W2071063768 modified "2023-10-16" @default.
• W2071063768 title "Investigation of Interface Formed between Top Electrodes and Epitaxial NiO Films for Bipolar Resistance Switching" @default.
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• W2071063768 doi "https://doi.org/10.1143/jjap.49.031102" @default.
• W2071063768 hasPublicationYear "2010" @default.
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