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• W2071078245 abstract "We investigated a double silicon-carbide p-layer structure consisting of a undiluted p-type amorphous silicon-carbide (p-a-SiC:H) window layer and a hydrogen diluted p-a-SiC:H buffer layer to improve a pin-type amorphous silicon based solar cell. Solar cells using a lightly boron-doped (1000 ppm) buffer layer with a high conductivity, low absorption, well-ordered film structure, and slow deposition rate improves the open-circuit voltage (Voc), short-circuit current density, and fill factor by reducing recombination in the buffer layer and at p/buffer and buffer/i interfaces. It is found that a natural hydrogen treatment generated throughout the buffer layer deposition onto the p-a-SiC:H window layer is an advantage of this double p-layer structure. We achieved a considerable initial conversion efficiency of 11.2% without any back reflector." @default.
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• W2071078245 date "2004-01-20" @default.
• W2071078245 modified "2023-09-28" @default.
• W2071078245 title "Improvement of <i>pin</i>-type amorphous silicon solar cell performance by employing double silicon-carbide <i>p</i> -layer structure" @default.
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• W2071078245 doi "https://doi.org/10.1063/1.1639140" @default.
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