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- W2071153782 abstract "In chemical mechanical polishing (CMP) process, the removal rate is affected by the actual contact conditions between the wafer and the polishing pad. Further, the free abrasives in the slurry attack the wafer at the regions of actual contact. The polishing pad is one of the most important consumable materials in CMP since the pad surface texture changes during wafer polishing and substantially influences the actual contact conditions. Therefore, methods for quantitative evaluation of the pad surface texture have been proposed by various research institutes. We have developed a novel method for the quantitative evaluation of the polishing pad surface texture; this method is based on contact image analysis using an image rotation prism. We have proposed the use of four effective evaluation parameters: the number of contact points, the contact ratio, the maximum value of the minimum spacing of the contact points, and the half-width of the peak of the spatial fast Fourier transform (FFT) of a contact image. We determine the changes in the polishing pad surface texture on the basis of the proposed evaluation parameters in serial batch polishing tests. In particular, we focus on the relationships between the proposed evaluation parameters and the removal rate, which changes with an increase in the number of batch polishing tests. The evaluation parameters are linearly correlated with the removal rate. Hence, the removal rate is improved not only with an increase of the number of contact points and the contact ratio but also with a decrease in the size of the cohesion regions and the spacing between the contact points." @default.
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- W2071153782 date "2011-01-01" @default.
- W2071153782 modified "2023-09-26" @default.
- W2071153782 title "Relationships between Contact Image Analysis Results for Pad Surface Texture and Removal Rate in CMP" @default.
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- W2071153782 doi "https://doi.org/10.1149/2.008202jes" @default.
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