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• W2071232176 abstract "To confirm the high spatial resolution expected in extreme ultraviolet (EUV) microscopy, fine grating patterns with a half-pitch of less than 100 nm on a lithography mask were imaged using a full-field microscope based on a multilayer-mirror objective. When the tilted illumination technique is applied to this novel imaging system, a spatial resolution better than 20 nm can be expected at a wavelength of 13.5 nm. We demonstrated high resolution via EUV reflection images of test patterns with a half-pitch between 30 and 80 nm." @default.
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• W2071232176 date "2014-09-11" @default.
• W2071232176 modified "2023-09-23" @default.
• W2071232176 title "Demonstrating 30-nm spatial resolution of three-multilayer-mirror objective for extreme ultraviolet microscopy: Imaging test by observing lithography mask" @default.
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• W2071232176 doi "https://doi.org/10.7567/apex.7.102502" @default.
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