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• W2071283072 abstract "An ultra-low-energy, high-dose, B-based implant was inserted after source/drain formation and before metal silicide contact deposition for PMOS devices. B beam-line implant and plasma doping (PLAD) using either B 2 H 6 or BF 3 gases were utilized for this implant process. The resulting PMOS device performance showed significant improvements, including ∼70 percent lower contact resistances, similar threshold and sub-threshold characteristics, and ∼15 percent higher drive currents without degrading off current. PLAD is preferred on this application because of its much higher throughput in this process regime." @default.
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• W2071283072 date "2012-04-20" @default.
• W2071283072 modified "2023-09-23" @default.
• W2071283072 title "PMOS device performance improvement using buried contact implants" @default.
• W2071283072 hasPublicationYear "2012" @default.
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