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- W2071308959 abstract "Rapid thermal annealing of GaAs within an enclosed, SiC-coated graphite susceptor is shown to eliminate slip formation during implant activation treatments (900 °C, 10 s) and to provide much better protection against surface degradation at the edges of wafers compared to the more conventional proximity method. The peak carrier concentration obtained in Si-implanted (3×1012 cm−2, 60 keV) GaAs by both methods is comparable, but the wafers annealed in the susceptor have tighter carrier profile width distributions measured over the whole wafer area." @default.
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- W2071308959 title "Rapid thermal annealing of GaAs in a graphite susceptor—comparison with proximity annealing" @default.
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- W2071308959 doi "https://doi.org/10.1063/1.343534" @default.
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