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- W2071326448 abstract "Incorporation of N into GaInAs results in N-localized-states close to the conduction band minimum. Such strong alloy band edge N-localized-states can locally capture carriers, thus lasing directly occurs from them, leading to dualwavelength emission." @default.
- W2071326448 created "2016-06-24" @default.
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- W2071326448 date "2015-03-16" @default.
- W2071326448 modified "2023-09-23" @default.
- W2071326448 title "Dual-wavelength GaInNAs semiconductor quantum-well distributed feedback laser" @default.
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- W2071326448 doi "https://doi.org/10.1117/12.2077646" @default.
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