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W2071574100 abstract "We compare the experimentally measured and theoretically calculated quantum efficiency (QE), where an analytical drift-diffusion photocurrent model is used, of n + -on-p InAs-GaSb superlattice (SL) photodiodes. With inputs of the transport parameters obtained by the electron-beam-induced current technique and absorption coefficient spectra calculated by the eight-band kldrp method for the p-SL, n + -SL, and depletion region, taking into account the band filling effect, we show that the drift-diffusion photocurrent model is a good approximation for the InAs-GaSb type-II SL photodiodes, which implies that the SL depletion region in InAs-GaSb SL photodiodes is as effective as that in bulk semiconductor photodiodes in terms of collecting the photo-excited electron-hole pairs. Using this theoretical model, we also find that the high doping density in n-type SL degrades the QE by reducing the absorption coefficient. As a result, the n-type doping density is suggested to be below 1times10 17 cm -3 in order to optimize the QE for the studied InAs-GaSb SL photodiodes." @default.
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W2071574100 date "2009-06-01" @default.
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W2071574100 title "Quantum Efficiency Analysis of InAs–GaSb Type-II Superlattice Photodiodes" @default.
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W2071574100 doi "https://doi.org/10.1109/jqe.2009.2013149" @default.
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