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• W2071592018 abstract "Single‐crystal gallium nitride was grown on each of the two polar {0001} planes of 6H‐silicon carbide substrates utilizing metal‐organic vapor‐phase epitaxy. The substrate polarity is clearly shown to strongly influence the surface morphology and the photoluminescence property of the layer. The examination of the layer surfaces using x‐ray photoelectron spectroscopy revealed that {0001} GaN grown on the basal planes of SiC changes its polarity in accordance with the substrate polarity." @default.
• W2071592018 created "2016-06-24" @default.
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• W2071592018 date "1988-11-01" @default.
• W2071592018 modified "2023-09-30" @default.
• W2071592018 title "Substrate‐polarity dependence of metal‐organic vapor‐phase epitaxy‐grown GaN on SiC" @default.
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• W2071592018 doi "https://doi.org/10.1063/1.341281" @default.
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