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- W2071640413 abstract "Photoreflectance (PR) spectroscopy has been used to study the surface Fermi level in GaAs by taking account of photovoltaic properties at the semiconductor surface. The PR signal amplitude ‖ΔR/R‖ is proportional to a modulating photovoltage Vm generated by a modulation light irradiation. To modify the surface potential, the sample was irradiated by a third perturbing light, i.e., a continuous bias light Pb, together with the modulation light. The modulation light power dependence of ‖ΔR/R‖ is extremely sensitive to bias light intensity, surface Fermi level, and temperature. From the analysis of the temperature dependence of ‖ΔR/R‖ on modulation-light power, the surface Fermi level of 0.47±0.09 eV below the conduction band was determined for a molecular beam epitaxially-grown GaAs(100)." @default.
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- W2071640413 date "1990-11-15" @default.
- W2071640413 modified "2023-10-04" @default.
- W2071640413 title "Photoreflectance characterization of surface Fermi level in as-grown GaAs(100)" @default.
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- W2071640413 doi "https://doi.org/10.1063/1.347023" @default.
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