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- W2071682649 abstract "We have succeeded in highly selective growth and positioning of Si- and SiGe-quantum-dots (QDs) on SiO2 patterns by controlling the reactive area, whose surface is terminated with OH bonds for Si nucleation in low-pressure chemical vapor deposition (LPCVD). The selective growth of QDs on thermally grown SiO2 line-patterns was demonstrated in LPCVD of SiH4 and GeH4 just after Si nucleation by controlling the early stages of Si2H6-LPCVD, which indicates effectively enhanced initial nucleation on OH-terminated SiO2 surface and suppression of the nucleation and growth of dots on as-grown SiO2 surface during Si2H6-LPCVD prior to SiH4-LPCVD." @default.
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- W2071682649 date "2014-01-01" @default.
- W2071682649 modified "2023-09-26" @default.
- W2071682649 title "Selective Growth of Self-Assembling Si and SiGe Quantum Dots" @default.
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- W2071682649 doi "https://doi.org/10.1587/transele.e97.c.393" @default.
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