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- W2071697795 abstract "Abstract Synchrotron base O 1s and N 1s photoabsorption spectroscopy have been used to determine the composition and thickness of oxynitride films grown in N 2 O on a Si(100) surface. Core-level photoabsorption spectroscopy is shown to be a very sensitive probe capable of measuring surface coverages lower than 0.1 monolayers of N (6.5×10 13 N atoms/cm 2 ). Film composiion was monitored as a function of growth to demonstrate the stoichiometry reversal from primarily N terminated surfaces in thin films to nearly pure SiO 2 in films thicker than ∼ 20 A. A sample with a 60 A oxynitride film was depth-profiled by etching in HF and was shown, via N 1s absorption spectroscopy, to have N segregation within 10 A above the Si/SiO 2 interface." @default.
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- W2071697795 date "1996-05-01" @default.
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- W2071697795 title "Stoichiometry reversal and depth-profiling in the growth of thin oxynitride films with N2O on Si(100) surfaces" @default.
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- W2071697795 doi "https://doi.org/10.1016/0368-2048(96)02940-4" @default.
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