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• W2071781149 abstract "In plasma-deposited a-Si:H films, the time dependence and saturation value of the metastable defect density produced by high-intensity illumination are found to depend on the material properties. From a wide range of deposition techniques, we have observed a strong correlation between the steady-state defect density Nss and the monohydride Si–H bond concentration observed in infrared transmission, with [SiH]2000 values between 2% and 16%. We propose a microscopic description of the light-induced defect creation and light-induced defect annealing phenomena in a-Si:H, based on the trapping of mobile H at two specific sites: the Si–H bond and the Si dangling bond. This model predicts a steady-state defect density proportional to the monohydride [SiH]. For the production of mobile H in three-center (Si–H–Si) configurations, a low-energy mechanism with no necessity for Si–H bond breaking is suggested from the observed changes in the infrared absorption of the various H-bonding configurations during light soaking. With the assistance of an electron-hole pair recombination, it consists of the excitation of two adjacent H atoms from a (Si–H H–Si) configuration along with a Si–Si bond reconstruction." @default.
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• W2071781149 date "1996-07-01" @default.
• W2071781149 modified "2023-09-25" @default.
• W2071781149 title "Role of Si–H bonding in <i>a</i>-Si:H metastability" @default.
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• W2071781149 doi "https://doi.org/10.1063/1.362777" @default.
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