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• W2071802912 abstract "We present a direct evidence that ion implantation through thin (⩽5 nm) surface oxide layers is a source of O impurities, which form O-defect complexes during thermal treatment. The impurity-defect complexes are identified by correlating the results from positron annihilation spectroscopy, secondary-ion mass spectroscopy, and Monte Carlo simulations. The O atoms are introduced in the bulk by multiple recoil implantation by the primary ions. The signatures of large VmOn formations are observed at 800 °C, which implies the existence of smaller species at lower temperatures." @default.
• W2071802912 created "2016-06-24" @default.
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• W2071802912 date "2000-03-13" @default.
• W2071802912 modified "2023-09-23" @default.
• W2071802912 title "A relation between surface oxide and oxygen-defect complexes in solid-phase epitaxial Si regrown from ion-beam-amorphized Si layers" @default.
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• W2071802912 doi "https://doi.org/10.1063/1.126047" @default.
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