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- W2071859451 abstract "In order to fabricate micro-mechanical parts with Au+ and Ga+ focused ion beams of 30 keV, machining characteristics of polycrystalline silicon and a computer simulation method for predicting profile change of patterns etched into a polycrystalline silicon wafer have been investigated. For patterns of low aspect ratio, fair coincidences between experimental and simulated resuls were obtained. From the examination of surface micro-topography of processed specimens using a profile SEM which is sensitive to the micro-topography of the surface, it becomes obvious that the specimen processed with Au+ ion at ion incidence angles of 0° to 70° have fine surface. Moreover, a focused ion beam apparatus having two secondary electron detectors has been developed for the in situ observation of the surface during the fabrication of the specimen." @default.
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- W2071859451 date "1990-01-01" @default.
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- W2071859451 title "Focused Ion Beam Fabrication of Micro-Mechanical Parts — Machining Characteristics of Polycrystalline Silicon and Computer Simulation of Profile Changes of Patterns" @default.
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- W2071859451 doi "https://doi.org/10.1016/s0007-8506(07)61036-1" @default.
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