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- W2071863852 abstract "Abstract An investigation of the epitaxial deposition of GaAs via the hydride system was undertaken to determine whether the purity of the layers normally obtained could be improved by proper control of the growth conditions. Recently published results on the chloride system for the preparation of GaAs have shown that in addition to certain fundamental parameters such as substrate orientation, reactant purity, and general cleanliness, impurity incorporation is primarily determined by the AsCl 3 mole fraction and the substrate temperature. Since the nature of the vapor phase reactants which produce the GaAs in both systems is identical, the mole fraction of these reactants were controlled in the hydride system by variation of the amount of hydrogen carrier gas used. Electrical characterization by Hall measurements of the GaAs epitaxial layers grown at 700 °C have shown that simple variation of the mole fraction of the reactants can vary the carrier concentration of the layers by over two orders of magnitude and that carrier concentrations in the low 10 14 carriers/cm 3 range with 77 °K mobilities of 10 5 cm 2 /V sec can be prepared. In addition, a theoretical model, which proposes that the impurity incorporation in epitaxial GaAs prepared in the chloride system is inversely proportional to the partial pressure of unreacted HCl in the vapor phase, was tested and did not hold in the hydride system." @default.
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- W2071863852 date "1974-10-01" @default.
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- W2071863852 title "The effect of the hydrogen carrier gas flow rate on the electrical properties of epitaxial GaAs prepared in a hydride system" @default.
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- W2071863852 doi "https://doi.org/10.1016/0022-0248(74)90310-8" @default.
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