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• W2071919087 abstract "Secondary-ion-mass spectrometry and high-resolution x-ray diffraction are used to investigate AlxGa1−xSb/GaSb heterostructures (0.2&lt;x&lt;1) grown by molecular beam epitaxy. We show that the AlCs+ and GaCs+ intensities, obtained by using caesium cluster secondary-ion-mass spectrometry mode, vary linearly with the relative concentrations, and therefore, allows us to evaluate quantitatively the aluminum and gallium contents in the epitaxial layers. Intermixing of Ga/Al species at the GaSb/AlSb interfaces could be clearly detected by secondary-ion-mass spectrometry and is also confirmed by high-resolution x-ray diffraction. The intermixing is the result of a particular mechanism in order to minimize the strain energy, and occurs prior to the lattice relaxation, which generates structural defects taking place. The analyses also give evidence of a constant arsenic contamination (∼0.5%) both in the GaSb buffer and in the AlxGa1−xSb layers. In fact, As contamination occurs if the molecular beam epitaxy chamber has been used previously for the growth of As-compound materials. We show that the signal obtained by using the caesium cluster secondary-ion-mass spectrometry mode AsCs+ is nearly unaffected by the changes of the Al content throughout the total structure (matrix effects) contrary to what occurs for single As ions." @default.
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• W2071919087 date "2001-05-01" @default.
• W2071919087 modified "2023-09-27" @default.
• W2071919087 title "Secondary-ion-mass spectrometry and high-resolution x-ray diffraction analyses of GaSb–AlGaSb heterostructures grown by molecular beam epitaxy" @default.
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• W2071919087 doi "https://doi.org/10.1116/1.1372926" @default.
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