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- W2071994816 abstract "Abstract Silicon nitride (SiN) fabricated by plasma-enhanced chemical vapour deposition (PECVD) is increasingly used within the crystalline silicon (c-Si) photovoltaic industry as it offers the possibility to fabricate a surface and bulk passivating antireflection coating at low temperature (⩽450°C). This article presents an overview on the present status of SiN for industrial as well as laboratory-type c-Si solar cells. Topics covered include the fundamentals of the PECVD technology, the present status of high-throughput PECVD machines for the deposition of SiN onto c-Si wafers, and a review of the fundamental properties of Si–SiN interfaces fabricated by PECVD." @default.
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- W2071994816 date "2001-01-01" @default.
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- W2071994816 title "Overview on SiN surface passivation of crystalline silicon solar cells" @default.
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- W2071994816 doi "https://doi.org/10.1016/s0927-0248(00)00099-4" @default.
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