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• W2072073646 abstract "The extension of ArF lithography through reduced k1, immersion and double patterning techniques makes lithography adifficult challenge. Currently, the concept of simple linear flow from design to functional photo-mask is being replacedby a more complex scheme of feedback and feed-forward loops which have become part of a complex computationallithography scheme. One such novel lithography concept, called lithography, was recently introduced byASML, as a scheme that makes the lithography process a highly efficient solution for the scaled down geometries. Thisapproach encourages efficient utilization of computational lithography and the use of feed-forward and feed-back criticaldimension (CD) and overlay correction loops. As sub-nanometer feature dimensions are reached for 3x nodes, with k1reaching the optics limitations, Mask error enhancement factor (MEEF) values grow fast, thus making mask uniformityfingerprint and degradation throughout its life time a significant factor in printed CDU on the wafer. Whereas theconsensus is on the need for growing density of intra-field data, traditional critical dimension scanning electronmicroscope (CDSEM) Feed backward loops to the litho-cell become unsuitable due to the high density CD measurementrequirements. Earlier publications proposed implementing the core of the holistic lithography concept by combining twotechnologies: Applied Material's IntenCDTM and ASML DoseMapper . IntenCD metrology data is streamed in a feedforwardfashion through DoseMapper and into the scanner, to create a dose compensation recipe which improves theoverall CDU performance. It has been demonstrated that the IntenCD maps can be used to efficiently reduce intra-fieldprinted CDU on printed wafers.In this paper we study the integration concept of IntenCD and DoseMapper in a production environment. We implementthe feed-forward concept by feeding IntenCD inspection data into DoseMapper that is connected to ASML'sTWSINCANTM XT:1900i scanner. We apply this concept on printed wafers and demonstrate significant reduction inintra-field CDU. This concept can effectively replace the feedback concept using send-ahead wafers and extensiveCDSEM measurements. The result is a significant cost saving and fab productivity improvement. By routinelymonitoring mask-based CDU, we propose that all photo-induced transmission degradation effects can be compensatedthrough the same mechanism. The result would be longer intervals between cleans, improved mask lifetime, and betterend of line device yield." @default.
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• W2072073646 date "2009-03-13" @default.
• W2072073646 modified "2023-09-27" @default.
• W2072073646 title "Novel lithography approach using feed-forward mask-based wafer CDU correction increase fab productivity and yield" @default.
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• W2072073646 doi "https://doi.org/10.1117/12.815415" @default.
• W2072073646 hasPublicationYear "2009" @default.
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