Matches in SemOpenAlex for { <https://semopenalex.org/work/W2072136513> ?p ?o ?g. }
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- W2072136513 endingPage "121" @default.
- W2072136513 startingPage "110" @default.
- W2072136513 abstract "An overview of the development of advanced Ti and Co self-aligned silicide (SALICIDE) processes for deep-sub micron high performance CMOS technologies at Texas Instruments is presented. SALICIDES are a key factor for scaling of high-performance CMOS devices. They are used to lower sheet resistance of gate and source/drain regions, contact resistance and source/drain series resistance, increasing device performance and lowering RC delays to allow faster operation. Their applicability to deep-sub-micron technologies is determined by the fundamental materials aspects controlling silicide phase formation and evolution, as well as process integration issues such as effect of subsequent processing steps on the silicide films or effects of silicide related process steps on transistor characteristics. The main scaling issues for conventional processes, high resistivity on narrow lines for Ti SALICIDE and high diode leakage on shallow junctions for Co SALICIDE, are addressed. Detailed kinetic studies of the high resistivity to low resistivity phase transformations (TiSi2 C49 to C54 and CoSi to CoSi2) and their dependence on linewidth and film thickness are presented. A nucleation density model is shown to account for the measured linewidth dependence and effect of pre-amorphization implants on the TiSi2 C49 to C54 transformation and explain, as a result, narrow line sheet resistance. This overview covers studies on rapid thermal processing (RTP) for Ti and for Co SALICIDE, pre-amorphization implants and Mo impurities which allowed the first demonstration of low resistivity Ti SALICIDE at 0.10 μm gate lengths, as well as applications to sub-0.18 μm CMOS technologies and integration issues." @default.
- W2072136513 created "2016-06-24" @default.
- W2072136513 creator A5049261995 @default.
- W2072136513 creator A5082183465 @default.
- W2072136513 date "1998-05-01" @default.
- W2072136513 modified "2023-09-26" @default.
- W2072136513 title "Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies" @default.
- W2072136513 cites W1972129519 @default.
- W2072136513 cites W1987019929 @default.
- W2072136513 cites W1989219297 @default.
- W2072136513 cites W2030096674 @default.
- W2072136513 cites W2030315194 @default.
- W2072136513 cites W2034601756 @default.
- W2072136513 cites W2042749055 @default.
- W2072136513 cites W2051260521 @default.
- W2072136513 cites W2066410274 @default.
- W2072136513 cites W2077057215 @default.
- W2072136513 cites W2079473614 @default.
- W2072136513 cites W2101971442 @default.
- W2072136513 cites W2119193106 @default.
- W2072136513 cites W2313145028 @default.
- W2072136513 cites W2322606053 @default.
- W2072136513 doi "https://doi.org/10.1016/s0040-6090(97)01069-9" @default.
- W2072136513 hasPublicationYear "1998" @default.
- W2072136513 type Work @default.
- W2072136513 sameAs 2072136513 @default.
- W2072136513 citedByCount "56" @default.
- W2072136513 countsByYear W20721365132012 @default.
- W2072136513 countsByYear W20721365132013 @default.
- W2072136513 countsByYear W20721365132015 @default.
- W2072136513 countsByYear W20721365132016 @default.
- W2072136513 countsByYear W20721365132017 @default.
- W2072136513 countsByYear W20721365132018 @default.
- W2072136513 countsByYear W20721365132021 @default.
- W2072136513 crossrefType "journal-article" @default.
- W2072136513 hasAuthorship W2072136513A5049261995 @default.
- W2072136513 hasAuthorship W2072136513A5082183465 @default.
- W2072136513 hasConcept C119599485 @default.
- W2072136513 hasConcept C127413603 @default.
- W2072136513 hasConcept C14485415 @default.
- W2072136513 hasConcept C165801399 @default.
- W2072136513 hasConcept C171250308 @default.
- W2072136513 hasConcept C173118649 @default.
- W2072136513 hasConcept C192562407 @default.
- W2072136513 hasConcept C2779227376 @default.
- W2072136513 hasConcept C2780901251 @default.
- W2072136513 hasConcept C46362747 @default.
- W2072136513 hasConcept C49040817 @default.
- W2072136513 hasConcept C544956773 @default.
- W2072136513 hasConcept C66825105 @default.
- W2072136513 hasConcept C69990965 @default.
- W2072136513 hasConceptScore W2072136513C119599485 @default.
- W2072136513 hasConceptScore W2072136513C127413603 @default.
- W2072136513 hasConceptScore W2072136513C14485415 @default.
- W2072136513 hasConceptScore W2072136513C165801399 @default.
- W2072136513 hasConceptScore W2072136513C171250308 @default.
- W2072136513 hasConceptScore W2072136513C173118649 @default.
- W2072136513 hasConceptScore W2072136513C192562407 @default.
- W2072136513 hasConceptScore W2072136513C2779227376 @default.
- W2072136513 hasConceptScore W2072136513C2780901251 @default.
- W2072136513 hasConceptScore W2072136513C46362747 @default.
- W2072136513 hasConceptScore W2072136513C49040817 @default.
- W2072136513 hasConceptScore W2072136513C544956773 @default.
- W2072136513 hasConceptScore W2072136513C66825105 @default.
- W2072136513 hasConceptScore W2072136513C69990965 @default.
- W2072136513 hasIssue "1" @default.
- W2072136513 hasLocation W20721365131 @default.
- W2072136513 hasOpenAccess W2072136513 @default.
- W2072136513 hasPrimaryLocation W20721365131 @default.
- W2072136513 hasRelatedWork W1966533589 @default.
- W2072136513 hasRelatedWork W1977812439 @default.
- W2072136513 hasRelatedWork W2030118299 @default.
- W2072136513 hasRelatedWork W2036569220 @default.
- W2072136513 hasRelatedWork W2077057215 @default.
- W2072136513 hasRelatedWork W2081564372 @default.
- W2072136513 hasRelatedWork W2107037564 @default.
- W2072136513 hasRelatedWork W2139568830 @default.
- W2072136513 hasRelatedWork W2164973179 @default.
- W2072136513 hasRelatedWork W4236916456 @default.
- W2072136513 hasVolume "320" @default.
- W2072136513 isParatext "false" @default.
- W2072136513 isRetracted "false" @default.
- W2072136513 magId "2072136513" @default.
- W2072136513 workType "article" @default.