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- W2072241921 abstract "The various aspects of X-ray lithography at H-P in terms of mask-fabrication, resist development, alignment systems and source development are reviewed in their present status. Masks are being developed, flat within one micron, and with very low substrate defect density. PCMS is described as an X-ray resist with moderate sensitivity, but very good physical properties. Advanced source cooling techniques are expected to allow power densities up to 60KW/cm2, enhancing the source brightness. A very compact automatic exposure system is described, with alignment accuracy of .15 micron RMS.© (1983) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only." @default.
- W2072241921 created "2016-06-24" @default.
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- W2072241921 date "1983-11-07" @default.
- W2072241921 modified "2023-09-23" @default.
- W2072241921 title "<title>Status Of X-Ray Lithography At H-P</title>" @default.
- W2072241921 doi "https://doi.org/10.1117/12.935099" @default.
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