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- W2072274927 abstract "Abstract By performing photoluminescence (PL) and deep level transient spectroscopy (DLTS) measurements on InP samples subjected to treatments inherent to epilayer growth and bombardment processes, we have obtained the following results : after a prior identification of Cu-, Mn- and Fe- related PL deep level emissions, it is shown that these impurities preexist in the bulk materials and that they participate in defect centers responsible for DL emissions detected in undoped epilayers in the 1-1.2eV spectral region. A dose dependent ion bombardment induced defect situated at about 0.53eV, below the conduction band is detected. Although no new PL emission is induced in electron irradiated samples, the luminescence is more seriously degraded in p-type than in n-type." @default.
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- W2072274927 date "1983-02-01" @default.
- W2072274927 modified "2023-09-26" @default.
- W2072274927 title "Investigation of process-induced defects in InP" @default.
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- W2072274927 doi "https://doi.org/10.1016/0378-4363(83)90289-9" @default.
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