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- W2072284450 abstract "It is shown that the forward voltage of heterostructure transistors can be modified by varying the thickness of the undoped GaAs layer beneath the gate or by low energy ion implantation of a surface layer. This suggests that the effective barrier height can be controlled by either technique." @default.
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- W2072284450 date "1993-11-01" @default.
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- W2072284450 title "Control of forward voltage in heterostructure transistors" @default.
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- W2072284450 doi "https://doi.org/10.1063/1.354160" @default.
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